Category: Crystal Growth Furnace

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Crystal Growth and Wafer Manufacturing Equipment by Process Stage

Crystal growth furnace equipment for semiconductor manufacturing, including silicon crystal pullers, MCZ furnace systems, and sapphire crystal growth furnaces. This category connects the growth stage with downstream ingot cropping, wafer slicing, lapping, and polishing equipment.

12-inch MCZ crystal puller

12-inch Si Crystal Puller

  • Technology: Continuous CZ (CCz) / H-MCZ
  • Max Diameter: 300 mm / 12 inch
  • Chamber ID: Φ1400 mm
  • Diameter Control: ±0.05 mm
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Kyropoulos Sapphire Crystal Growth Furnace

Sapphire Crystal Growth Furnace

  • Method: Continuous Czochralski (CCz) / H-MCZ
  • Max Capacity: 1000kg (Customizable)
  • Max Diameter: 300 mm / 12 inch
  • Uniformity: < 6.0% Resistivity (RRG)
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Continuous Czochralski Crystal Puller

Silicon Crystal Puller

  • Method: Continuous Czochralski (CCz) / H-MCZ
  • Max Capacity: 1000kg (Customizable)
  • Max Diameter: 300 mm / 12 inch
  • Uniformity: < 6.0% Resistivity (RRG)
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