CCz-1600
Continuous Czochralski Crystal Puller for Semiconductor-Grade Silicon
The CCz-1600 is a continuous charging Czochralski crystal puller designed for semiconductor-grade silicon ingot production. Automated continuous feeding and closed-loop solid doping enable longer crystal runs, tighter resistivity control, and lower cost per kilogram — without upsizing the furnace.
Four reasons to choose continuous charging.
Every advantage below is production-proven on the CCz-1600 platform — backed by in-house process validation data.
Automated Continuous Charging
Automated continuous feeding system with linearly adjustable feed rate. Real-time feed rate fluctuation is held below ±10g/min — stable enough to maintain consistent melt volume and thermal conditions throughout the entire crystal growth run.
High Effective Doping Coefficient
Automated continuous solid doping system with closed-loop control. Dopant is fed dynamically in proportion to the silicon charge. Effective doping coefficient is 2–3× higher than gas-phase doping — meaning less dopant waste and stronger resistivity control.
Precise Resistivity Control
Enables narrow resistivity distribution across the full crystal length. Both radial and axial resistivity uniformity are maintained by keeping dopant concentration stable through continuous proportional feeding — not just at the seed end.
Higher Throughput, Same Furnace
Throughput increases without scaling up crucible size, furnace body, or hot zone dimensions. Continuous feeding extends the crystal run from the same chamber — higher production efficiency and lower cost per kilogram of crystal produced.
Validated recipes.
Real production data.
The CCz-1600 ships with crystal growth recipes developed and validated in-house. These results come from our own crystal pulls — not simulations.
10″ Ga-Doped P-Type Crystal
Full-length axial resistivity control on a 10-inch gallium-doped P-type ingot. Continuous doping maintains tight uniformity from head to tail.
Radial RRG: ＜ 6.0%
8″ P-Doped N-Type Ultra-Low-Ω
Ultra-low resistivity 8-inch phosphorus-doped N-type crystal — the regime where gas-phase doping can't compete.
Radial RRG: ＜ 6%
Технические характеристики
| # | Параметр | Технические характеристики |
|---|---|---|
| 01 | Overall Dimensions (L × W × H) | 2000 × 2300 × 10800 mm |
| 02 | Charge Capacity | 1000 kg (customizable) |
| 03 | Doping System | High-precision continuous online solid doping, control precision ±0.01g |
| 04 | Main Chamber Inner Diameter | Φ1400 мм |
| 05 | Pull Chamber Inner Diameter | Φ350 mm |
| 06 | Hot Zone Compatibility | 24–34″ RCZ + 32–34″ CCz; crystals up to 10″ diameter |
| 07 | Heating Method | Resistance heating, DC power supply, Pmax = 150:50 kW |
| 08 | Charging Method | Side-mounted continuous external feeder (1200 kg) + dynamic online silicon replenishment + in-crucible pre-loading |
| 09 | Feed Rate Range | 20 – 600 g/min, linearly adjustable |
| 10 | Feed Rate Control Precision | ≤ 500 g/hr |
| 11 | Real-Time Feed Rate Fluctuation | ＜ ±10 g/min |
The economics of continuous charging.
Continuous charging doesn't just change how you grow crystal — it changes the production economics. Here's what that means for your operation.
More Crystal, Same Footprint
Extend crystal run length from the same Φ1400mm chamber. No need to invest in a larger furnace, bigger hot zone, or reinforced floor — throughput scales through run time, not equipment size.
Lower Cost per Kilogram
Eliminate the cool-down, reload, and reheat cycle between pulls. Continuous operation means more productive furnace-hours per month, directly reducing the per-kilogram cost of crystal produced.
Tighter Spec, Higher Yield
Continuous doping maintains resistivity uniformity across the full ingot — not just the first section. More usable crystal per run means fewer rejected wafers and higher downstream yield.
RCZ + CCz Dual Mode
The same furnace runs both conventional recharged CZ and continuous charging. Start with RCZ recipes you already know, then transition to continuous mode at your own pace.
Proven Recipes Included
Ships with validated crystal growth recipes for Ga-doped P-type and P-doped N-type crystals — including ultra-low resistivity specs. Start from a known-good process.
Full-Service Delivery
Site survey, installation, commissioning, first-crystal qualification, and long-term consumables supply — all from one supplier. We stay until the furnace is producing to spec.
Common questions about the CCz-1600.
From ingot to polished wafer.
After the crystal grows, it moves through cropping, slicing, lapping, and polishing. We supply the full downstream line — one supplier from crystal puller to finished wafer.
Ready to discuss
continuous CZ crystal pulling?
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