
Compact, high-precision oscillating wire saw engineered for ultra-hard thin-slice cutting at scale. Three-axis single-station design delivers a low center of gravity, outstanding dimensional stability, and superior surface quality — the preferred choice for large-volume sapphire, SiC, and hard-brittle material slicing.
The wire runs in a controlled forward-backward oscillation pattern during each cutting pass. This distributes abrasive wear evenly along the wire, reduces heat buildup, and dramatically improves surface finish on ultra-hard materials like sapphire and SiC compared to single-direction cutting.
Machine geometry is optimized to position the cutting zone close to the base frame. This minimizes resonance and vibration during high-speed oscillation, delivering tight TTV (Total Thickness Variation) and consistent Ra surface roughness across every slice in the batch.
Three-axis closed-loop servo control independently manages wire tension, wire speed, and workpiece feed rate. Single-station layout allows finer center-to-center wire spacing, enabling thinner minimum slice thickness compared to dual-station configurations.
At 2200 × 2000 mm floor space, the SOMS3-430S is the most space-efficient model in the SOM series. High machine density is achievable in your facility without sacrificing cutting capacity for ultra-hard material applications.
Average power consumption stays at or below 15 kW — the same energy envelope as the larger SOM4-630D dual-station model. The oscillating mechanism's reciprocal motion reduces peak load spikes throughout the cut cycle.
Engineered for Mohs 5–9.5 materials: sapphire, SiC, GaAs, silicon, NdFeB magnets, industrial ceramics, and quartz crystal. Slice thickness 0.5–3 mm covers the demanding thin-wafer range that standard straight-cut saws struggle with on hard-brittle substrates.
| 아니요. | 매개변수 | 사양 | Notes |
|---|---|---|---|
| 1 | Max. Workpiece Size (L×W×H) | 430 × 160 × 150 mm | Single-station configuration |
| 2 | Slice Thickness Range | 0.5 – 3 mm | Ultra-thin slice capability |
| 3 | Groove Wheel Diameter | 140 – 160 mm | Interchangeable configuration |
| 4 | Average Power Consumption | ≤ 15 kW | Energy-efficient operation |
| 5 | Overall Dimensions (L×W×H) | 2200 × 2000 × 2600 mm | Compact single-station footprint |
| 6 | Number of Stations | 1 (Single-Station) | Precision-focused configuration |
| 7 | 커팅 모드 | Forward-Cut (正切) + Oscillation, 3-Axis | Oscillating mechanism |
| 8 | Target Material Hardness | Mohs 5 – 9.5 | Ultra-hard brittle materials |
| 9 | Compatible Materials | Sapphire, SiC, Si, GaAs, NdFeB, Ceramics, Crystal | — |
| 10 | Quality Certifications | ISO 9001 · CE | — |
Batch slicing sapphire boules into LED-grade and optical-grade wafers. Mohs 9 hardness handled with minimal micro-crack formation thanks to oscillating cut.
Slicing SiC boules into power semiconductor substrates. Oscillating wire reduces progressive degradation on this Mohs 9.5 material, lowering per-wafer wire cost.
Precision thin-slice silicon wafer production (0.5–3 mm). Single-station ensures tight center-to-center wire spacing for high-yield thin-wafer batches.
High-volume slicing of NdFeB blocks into thin magnet segments for EV motors, wind turbines, and consumer electronics.
Alumina, zirconia, and silicon nitride thin slab production for structural, electronic, and optical ceramic components.
Natural and synthetic quartz crystal wafers for electronic and optical applications. Low kerf loss preserves valuable raw material.
| 기능 | SOM2-600S | SOMS3-430S ★ | SOM4-630D | SOM4-750D |
|---|---|---|---|---|
| Max Workpiece | 660 mm | 430 mm | 630 mm ×2 | 750 mm ×2 |
| Min Slice Thickness | 0.3mm | 0.5mm | 1.5 mm | 1.5 mm |
| Oscillating Cut | ✗ | ✓ | ✗ | ✗ |
| Station Count | Single | Single | Dual | Dual |
| Low CG Design | ✗ | ✓ | ✓ | ✓ |
| Avg. Power (kW) | — | ≤ 15 | ≤ 15 | ≤ 30 |
| Best For | High-speed thin slice | Ultra-hard thin slice at scale | Dual-station throughput | Large workpiece / ID saw replacement |
Built in-house at our Shanghai facility. No intermediary markup — factory pricing with direct engineering access and full process customization support.
Installed at leading semiconductor, NdFeB, and sapphire manufacturers across China — including Qingdao Gaoce Technology, Leshan JYT Semiconductor, and Yibin Yingfa Technology.
On-site commissioning, cutting parameter optimization for your specific material, and operator training are all included with every machine purchase.
Vimfun supplies precision diamond wire matched to SOMS3-430S groove wheel specifications — single-source supply ensures optimal wire-to-wheel compatibility and consistent cutting results.
In standard cutting, the wire travels primarily in one direction. In the SOMS3-430S's oscillating cut, the wire makes controlled forward-backward swings during each pass. This distributes abrasive wear evenly along the wire length, reduces localized heat buildup, and produces cleaner surface finish with lower subsurface damage — especially critical for hard brittle materials like sapphire and SiC.
Yes. SiC has a Mohs hardness of approximately 9–9.5, making it one of the most challenging materials for wire saws. The oscillating mechanism specifically benefits SiC cutting because it reduces progressive wire degradation that occurs when cutting this extremely hard material in a single direction. Contact us for process parameter recommendations specific to your SiC boule diameter and target wafer thickness.
The SOM2-600S (max 2200 m/min wire speed) prioritizes cutting speed for softer materials like silicon, reaching down to 0.3 mm slices. The SOMS3-430S targets surface quality and ultra-hard material capability through oscillation. If your material is harder than Mohs 7 (sapphire, SiC, ceramics) or surface finish quality is critical, the SOMS3-430S is the recommended choice.
Standard lead time is 60–90 days from order confirmation. On-site installation, commissioning, and operator training are included. Contact us for expedited delivery options.
Yes. The SOMS3-430S supports automation-ready integration for loading and unloading systems. Please discuss your specific automation requirements — including production line interfaces and throughput targets — with our engineering team during the enquiry process.
Max 2200 m/min wire speed. Best for ultra-thin slices 0.3–3mm at high throughput.
View Details →Dual-station, arc-out <10 min. Best for high-volume silicon and SiC production.
View Details →750mm dual-station. Best replacement for traditional ID saws on large workpieces.
View Details →1000mm dual-station. 85 kW. Maximum throughput for large-scale production lines.
View Details →Tell us your material type, workpiece dimensions, and target slice thickness — our engineers respond within 24 hours with a customized technical proposal and pricing.
Email: daria@endlesswiresaw.com | Tel: +86 130 2773 8908